January 18, 2007 – NEC Electronics today announced its CB-55L cell-based IC using its 55nm “UX7LS” process technology, which it says is the first 55nm device to use high-k dielectric to reduce leakage current.
The 55nm process uses 40% less power than NEC’s 90nm process, and increases density by 230%, fitting 925,000 gates per sq. cm, the company said.
The device also incorporates DM techniques including on-line/on-the-grid layout to prevent excessive parameter variations, resulting in “very high reliability,” the company claims, making it ideal for portable devices that suck up a lot of power, such as digital still and video cameras.
In fact, NEC says that initially it will support CB-55L designs only to makers of digital cameras and other portable devices. IP macros such as USB 2.0, JPEG, and DDR/DDR2 will be provided, as well as commodity IP including PLLs, A/D converters, and D/A converters. Libraries will be available in March.