Samsung uncrates 50nm 16Gbit NAND flash

January 4, 2007 – Samsung says it is now sampling 16Gbit NAND flash memory devices made with 50nm process technology. Mass production is planned for 1Q07.

The devices incorporate a multilevel cell design and 4KB page size, which the company says doubles the read speed and increases write performance by 150%.

Applications for the memory include storing or reading large data files in an external memory card, or a handset with a built-in flash.


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