Transistor Technology Claims Low Leakage

(January 30, 2007) SANTA CLARA, CA &#151 Intel Corporation is using new materials to build insulating walls and switching gates to enable 45-nm transistor technology. The hafnium-based high-k gate dielectric and metal-composite transistor gate electrode will be incorporated into a product family codenamed Penryn.


Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.