GaAs IC firm planning China fab

April 9, 2007 – Anadigics Inc. says it has agreed to build a 150mm gallium arsenide (GaAs) IC wafer fab in Kunshan, in China’s Jiangsu Province, to add capacity beyond its current primary wafer fab in New Jersey.

The company plans to invest $10-$15 million over the next two years (starting in 4Q07), with initial production expected to be complete by the end of 2009. Total investment over the fab’s entire projected lifetime — potentially up to 50 years — would be just under $50 million, the company says.

The fab will be jointly built with the Kunshan New and Hi-Tech Industrial Development Zone, which was established in 1994 and approved in 2005 by the Chinese government to set up a new high-tech industry development zone.


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