Hynix breaks ground on $4.1B fab

April 30, 2007 – Hynix Semiconductor Inc. says it has begun construction of its new 300mm facility, Fab M-11, in Cheongju, North Chungcheong province, which it plans to have up and running by 3Q08 for sub-48nm NAND flash memory production. Total investment is projected to be about $4.10 billion over roughly 2.5 years.

Hynix already has 300mm capabilities through fab operations in Icheon, Korea, as well as 300mm capacity through its Wuxi, China JV with STMicroelectronics, which was planned to initially focus on 110-90nm DRAM and bring up NAND flash later this year, eventually mixing the two based on market conditions. The company also has a foundry deal with Taiwan’s ProMos Technologies Inc. for access to additional 300mm capacity.


Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.