Intel, Micron sampling 16Gbit 50nm NAND devices

April 25, 2007 – IM Flash Technologies, the NAND flash JV between Intel Corp. and Micron Technology Inc., is sampling 16Gb die density, 50nm multilevel cell NAND flash devices, and work is underway on 40nm NAND as well, the companies said.

IM Flash has been producing wafers since February from its fully dedicated 300mm facility in Lehi, UT, in addition to sites in Manassas VA, and Boise, ID, the companies noted. A new 300m project in Singapore launched last November also will be dedicated to the NAND flash JV.

Last June the JV started sampling 4Gbit NAND flash devices using the 50nm process technology.

“The progress of our joint venture with Micron to develop industry-leading architecture has surpassed our expectations during this first year,” said Randy Wilhelm, VP and GM of Intel’s NAND products group. “Developing the industry’s most advanced 50nm MLC architecture is a further proof point to the strength of this development and manufacturing relationship.”


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