Samsung Develops DRAM Stack with TSVs

(April 23, 2007) SEOUL, South Korea &#151 Samsung Electronics Co., Ltd., has developed an all-DRAM stacked-memory package using through-silicon vias (TSVs) housed in aluminum pads to avoid performance slow-downs caused by the redistribution layer. The company applied a proprietary wafer-thinning technique to eliminate warped die in the low-profile package.

(April 23, 2007) AKITA, Japan &#151 Akita Elpida Memory, Inc., developed a 1.4-mm-thick multi-chip package (MCP) encompassing 20 thinned and stacked die. The company plans to incorporate processes used on this 20-die package to improve performance and manufacturability of more widely used 5- to 7-die-stack 3D packages.


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