Hynix touts first DDR3 validation

May 1, 2007 – Hynix Semiconductor Inc. says Intel has validated the company’s 16Gbit DDR3 SDRAM memory components and modules based on 80nm process technology.

The devices, 1GB-2GB DDR3 unbuffered-DIMMS have operating speeds of 800MHz and 1066MHz at 1.5V power supply, in combinations of 5-5-5 and 6-6-6 for 800MHz and 7-7-7 for 1066MHz.

The DDR3 devices offer nearly 25% lower current consumption compared with present-generation DDR2, with current leakage further reduced by the company’s “three-dimensional transistor architecture.”

Mass production of the 1GB DDR3 devices using 80nm process technologies is slated for 3Q07, with a shift to 66nm processes later in the year.


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