Tracit’s circuit layer transfer tech enables e2v’s next-gen image sensors

May 31, 2007 — e2v, developer and manufacturer of electronic components and subsystems, has announced a new generation of high-sensitivity imaging sensors that leverage technology from Tracit Technologies, a new division of the Soitec Group.

Combining e2v’s expertise with Tracit’s circuit layer transfer technology makes available back-illumination capability to medium volume markets for the first time. This promises a dramatic improvement in sensor sensitivity when compared to a standard front-illuminated sensor.

The company says this improvement in sensitivity makes its new sensor ideal for a broad range of applications, especially in medium volume, professional markets. It also complements e2v’s existing back-illumination capability for low-volume markets like aerospace and life sciences.

“We . . . see great potential, particularly in small-pixel CMOS sensors,” said Jean-Philippe Lamarcq, Imaging Business Unit General Manager at e2v.

According to Dr. Bernard Aspar, founder and General Manager of Tracit Technologies, “The ability to move finished circuits onto new supports is a promising way to improve device performance or to enable hetero-structure stacking for 3D integration.”

Both e2v and Tracit are based in Grenoble, France.


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