AMAT touts new low-k barrier system

June 4, 2007 – Applied Materials Inc. has launched an upgraded deposition system to provide advanced barrier low-k technology for 45nm and 32nm chip manufacturing processes.

The BLOk II film, when used with other ultralow-k dielectric layers, can reduce the effective k value of the interconnect dielectric stack by up to 10%, the company says. An in-situ preclean treatment enabled by the single-wafer Producer BLOk II PECVD tool provides 30% higher electromigration resistance than competing barrier technologies, according to a statement.

Applied says the integrated performance of BLOk II with the company’s Black Diamond low-k films was validated at its Maydan Technology Center, with stacks successfully etched, optimized for selectivity, etch rate, and undercut. The BLOk II film is currently being used “at multiple customer sites” for 32nm development, Applied claims, adding that it has more than 250 BLOk chambers in production that can be upgraded to BLOk II technology.


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