The Expida 1255S provides “single system simplicity.” (Photo: FEI Co.)

June 12, 2007 — FEI Company has introduced the next-generation tool in its DualBeam product family, the Expida 1255S. It is the only DualBeam system to integrate wafer level STEM (scanning/transmission electron microscopy) sample preparation with ultra-high-resolution imaging and analysis in a single tool. The Expida 1255S features an advanced ion beam column for preparing TEM samples, and an enhanced electron column with a 14-segment STEM detector for high-resolution 30kV imaging.

Until now, advanced sample preparation and handling often caused frustrating delays and required the use of multiple systems and processes to create high-quality TEM samples. The Expida 1255S assures correct end-pointing and precise lamella thickness by enabling STEM imaging while milling the TEM sample to its final location and required thickness.

The new Expida system addresses the requirements of high-throughput STEM imaging and analysis for sub-45 nanometer process control. With its speed, accuracy and integrated operation, the Expida 1255S delivers complete sets of data faster, and ultimately delivers faster time to market and a faster ramp to volume production.

“Semiconductor labs supporting process control for volume manufacturing have often been caught in a bind,” explains Tony Edwards, vice president of FEI’s NanoElectronics market division. “Time-efficient SEM tools lacked the necessary magnification and resolutions for today’s device designs while higher-resolution STEM and TEM systems required time-consuming sample preparation. FEI’s innovations in DualBeam and electron microscopy have enabled us to deliver this faster and simpler solution for semiconductor manufacturers.”