Report: Hynix prepping 57nm NAND flash as Toshiba, Samsung move down

June 25, 2007 – Hynix Semiconductor reportedly will migrate its 60nm NAND flash to 57nm production at its 200mm fabs in 3Q07 in a move to cut costs by around 20%, as rivals Samsung and Toshiba continue to press on to 56-50nm, according to a Digitimes report citing “downstream customers.”

The report adds that Hynix plans to introduce 48nm NAND flash in 1Q08, a move that likely will not allow the same cost-savings since it will not be able to take advance of 200mm processes.

Digitimes notes that Toshiba “is running very well” with both yields and volumes for its 56nm processes, though Samsung is having “bottlenecks” with its 52nm multilevel NAND flash production, citing a “memory module house” with ties to both firms.


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