June 14, 2007 – Samsung Electronics Co. Ltd. has opened its new 300mm NAND flash memory wafer plant in Austin, TX, a $3.5 billion facility nearly twice the size of Samsung’s adjacent existing 200mm fab. The new 300mm site will start operation later this year initially focusing on 16Gbit flash chips and 50nm process technologies, and ramp to 60,000 wafers/month output by 2008.
The 10-year-old 200mm site will continue to make DRAM chips, producing a mix of memory chips for computers and mobile devices, Samsung said, in a statement.
Samsung says it has committed $3.5 billion for the new fab — the largest single foreign investment in Texas, and more than twice what Samsung spent for its existing memory plant in Texas back in 1996. The company has hired about 700 new employees, and will swell its overall Austin payroll by 67% to about $100 million once the new site is in full operation.