August 29, 2007 – Korean foundry Dongbu HiTek says it will start volume production next month of low-power 8MB/3V SRAM devices for EMLSI, a provider of memory for mobile applications, having shifted the work from Dongbu’s 0.18-micron CMOS process to its 0.15-micron process.

Jae Song, EVP for Dongbu HiTek, noted in a statement that the companies are now working to shift more of EMLSI’s SRAMs, including 2MB/3V and 4MB/5V devices, to the 0.15-micron node “in the near future.”