Lam Research ships first 300 mm system for 3-D IC through-silicon via etch

August 22, 2007 — Lam Research Corp. has shipped its first 300 mm 2300 Syndion etch system, designed for 3-D IC through-silicon via (TSV) etch applications.

TSVs provide the interconnects for die-to-die and wafer-to-wafer stacking, eliminating wire bonding to increase device packing density (smaller form factor) and improve performance (higher speed and lower power). TSVs are created during wafer fabrication or later during assembly and packaging, and process integration schemes vary widely.

“We believe we are the first supplier to ship a 300 mm system for TSV etch applications,” said Lam Research’s Jackie Seto, managing director, Software, MEMS, and 3-D IC Products, “and, by leveraging our extensive 300 mm and MEMS deep silicon etch production experience, we are taking a leading role in establishing the benchmarks for these challenging etch applications.”

The Syndion promises etch capability for a wide range of integration schemes, and uniformity across 300 mm wafers. It has reportedly etched vias ranging from 2 to 100 microns wide with depths of 20 microns to greater than 400 microns deep. Based on Lam’s high-density TCP planar plasma source, Syndion enables both 200 mm and 300 mm operation.


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