August 17, 2007 – Technologies and Devices International Inc. (TDI) says it is now producing indium-gallium-nitride (InGaN) substrates for packaging GaN-based high-brightness LEDs and blue and green laser diodes, targeting volume production for early 2008.
The material’s crystal lattice and thermal properties are composed to match the given overgrown GaN device, which can reduce defects, improve device efficiency and output, and boost lifetime and power usage, according to the company.
The InGaN substrates are grown by proprietary hydride vapor phase epitaxy (HVPE) processes (on equipment designed and built by TDI), which build in InGaN layer through deposition onto 2″ GaN/sapphire templates. InN content ranges from 5 to 20 mol. %, and deposition rate, doping levels, composition range, and density are adjusted to meet customer parameters. TDI plans to scale the process to 6″ and larger wafers in high-throughput volume production.
InGaN materials, a match for GaN-based epitaxial structures, can supply the light-emitting regions of laser diodes and LEDs and determine device parameters. The US Department of Energy (DOE) and Department of Defense (DOD) supported development and production qualification for the technology.