Firm touts “breakthrough” for 32nm maskless litho

September 14, 2007 – Dutch firm Mapper Lithography says it has achieved “massively parallel electron beam writing” with its newest maskless litho technology, demonstrating 45nm dense patterns in resist.

The company’s new maskless litho technology, which it says can significantly reduce manufacturing costs, is incorporated into a tool that uses light to switch electron beams individually, while MEMS arrays focus the parallel electron beams. More than 10,000 parallel electron beams can pass through the system, which also utilizes fiber-optics to transport large quantities of information, the company explained, in a statement.

The work represents “a significant breakthrough” that proves the multibeam resolution capability of Mapper’s low-voltage approach, stated Burn Lin, senior director of TSMC’s litho division. Lin previously indicated that TSMC wants a multi-beam direct write tool in 2009 to write first level contact holes at the 22nm node, or in 2011, when EUV firms hope they will be ready.

Mapper CEO Boudewijn Baud indicated the next step will be transferring the maskless litho technology to a 300mm platform, a project for which the company will “significantly expand” its workforce.


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