September 12, 2007 – Samsung has developed what it says is the industry’s first “60nm-class” 2Gb DDR2 DRAM devices, offering 20% faster (800Mb/sec speeds) and 40% more production efficiency than the 80nm version. The 2Gb DDR2 device uses approximately 30% less power than a module of the same capacity using 1Gb chips, generating less heat and improving reliability, the company claims. Mass production is planned to ramp within the next couple of months, giving Samsung a complete DDR2 lineup at 20nm (512Mb, 1Gb, and 2Gb).
The chipmaker sees greater meaning in this move to 60nm for its 2Gb DRAMs — it wants to make room to move toward higher densities in high-end chip segments, and it also thinks the new devices will help stabilize DRAM prices, notes the Korea Times, citing Samsung officials.
The firm is also looking to solidify its place in the 2Gb DRAM market, which is expected to grow to $14 billion by 2011, making up 47% of total DRAM device sales, according to data from Gartner Dataquest.