Toppan joins CEA-Leti’s double patterning program

September 18, 2007 – Toppan Photomasks Inc. has joined a consortium led by European research lab CEA-Leti to jointly develop double patterning techniques, seen as a way to extend 193nm lithography to the 32nm and offer an eventual bridge to EUV whenever it enters semiconductor manufacturing (likely after 2013).

“Understanding the challenges of double patterning such as CD and placement control and the additional requirements this technology places on mask manufacturing is key to successfully implementing a double patterning strategy for our customers,” said Franklin Kalk, EVP and CTO of Toppan Photomasks, in a statement. Combining Toppan’s OPC models, OPC application to patterns and advanced mask manufacturing with CEA-Leti’s expertise, will “assure that photomask technology for double patterning is available when our customers are ready for it,” he said.

“This partnership with Toppan is a critical part of our consortium’s efforts to develop all aspects of double patterning, and it underscores our commitment to work with leading global technology companies to provide chipmakers with superior advanced lithography technology,” added Olivier Demolliens, head of the Nanotec Division at CEA-Leti.

Nikon is also participating in the work, some of which will be performed at CEA-Leti’s Nanotec 300 research facility, with photomask fabrication and analysis done at Toppan’s facility in Dresden, Germany.


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