Why flash and DRAM rule the future of IC memory

by Ed Korczynski, Senior Technical Editor, Solid State Technology

At a one-day technical symposium on Sept. 20 sponsored by the IEEE and Applied Materials, a standing-room-only crowd of technologists learned about the leading-edge of manufacturing the densest, fastest, cheapest IC memories. The take-away theme: the two trains of DRAM and flash memory technologies have long “left the station” and unless and until they stop, other promising technologies such as phase-change (PRAM) and magneto-resistance (MRAM) will be relegated to niche applications.


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