Toshiba cuts ribbon on 200mm power device fab

October 15, 2007 – Toshiba Corp. and Kaga Toshiba Electronics Corp. have opened a new 200mm semiconductor production fab in Ishikawa Prefecture targeting devices that control current flow and voltage conversion in end-use products such as TVs, mobile electronic products, and even hybrid vehicles.

A first investment phase is now completed at the 23,000 sq. m site, capitalized at 3.3 billion yen (US ~$28M) and now employing 850 workers. Total investment in the facility is expected to be 55B yen (US ~$468M) over the next five years, with output initially ramped to 60,000 wafers/month, and expansion beyond that to be based on market demand.

The Ishikawa investment is part of a plan to bolster Toshiba’s discrete business as a third area of strength, alongside the company’s NAND flash operations at Yokkaichi and system LSIs produced in Oita, noted Keizo Tani, EVP of Toshiba’s semiconductor company and VP of the discrete semiconductor division. “We are promoting this investment in Kaga Toshiba in order to expand our businesses in power devices, a key product area, and to reinforce the overall profitability of the semiconductor business.”


Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.