Micron touts new 68nm 1Gb DDR2

December 13, 2007 – Micron Technology says it has produced samples of a 1Gb DDR2 device using 68nm process technologies, with a die size of 56 sq. mm. Mass production is planned for early 2008, followed by DDR3 and other low-power DRAM products in 2H08.

The initial memory technology will be marketed to server, mobile, and other computing applications for its reduced die size, faster speeds, and lower power consumption. The forthcoming DDR3 products will enable speeds up to 1600Mbps, while the 68nm process rules will reduce power consumption by 20% compared with previous generations, the company stated.


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