New JEOL SEM/FIB enables simultaneous micro milling and hi-res imaging

The MultiBeam combines FIB micro milling and high-resolution SEM imaging. (Photo: JEOL USA)

December 6, 2007 — JEOL USA’s new high-throughput SEM/FIB combines focused ion beam micro milling with the high-resolution imaging of the JEOL LaB6 electron column. JEOL designed the MultiBeam to serve as a high-productivity tool for IC defect analysis, circuit modification, TEM thin film sample preparation, and mask repair.

The all-in-one system features Serial Slicing and Sampling (S3) for in-process monitoring of milling, fabrication, and reconstructing 3D images of the sectioned area. According to the company, a maximum milling current of 30 nA ensures high throughput milling of large areas.

Additional features include low vacuum operation for non-conductive specimens without coating or alteration, a gas injection system for etching and deposition, a large stage for up to 150 mm samples, and a multiple port design for a range of analytical needs. Samples are loaded through a standard airlock system.

JEOL has sold the new the MultiBeam systems to two nano-imaging labs, both of which will take delivery in early 2008. JEOL USA has formed a partnership with both the University of Southern California and Boston College which will advance applications research on the east and west coasts.


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