Triquint offering combines InGaP, InGaAs processes

December 3, 2007 – Triquint Semiconductor says it has combined two processes for wireless/RF design to integrate functional blocks onto a single die, reducing part count, saving board space and lowering system costs.

The TQBiHEMT process combines the firm’s high-volume InGaP HBT process (TQHBT3) for high power, high efficiency and linear power amplifiers, with its InGaAs E/D pHEMT process (TQPED) for making high isolation switches and low-noise amplifiers in handsets and wireless data systems. The combination enables creation of single chip products with high-power amplifiers in HBT on the same die as pHEMT low-noise amplifiers and pHEMT switches.

The process, fabricated on 150mm wafers, incorporates an InGaP HBT transistor, a depletion mode pHEMT transistor, and an enhancement mode pHEMT transistor, combined with high-Q passive circuit elements (precision thin film, nichrome resistors, high value bulk epi resistors, and high value/small area capacitors), with three interconnecting metal layers and an optional backside grounding via technology.

Target applications for the process are highly integrated frontend radio modules for wireless applications requiring high data rates and frequencies (e.g. 3G-4G), the company noted.

“TQBiHEMT provides wireless communications system designers the circuit component and 3-layer interconnect technology required to optimize performance goals for next generation RFICs,” noted Mike Peters, director of marketing for Triquint’s commercial foundry, in a statement. Asif Anwar of Strategy Analytics added that the TQBiHEMT process “an evolutionary step-up from earlier BiFET technologies.”


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