Feb. 26, 2008 – Rohm and Haas Electronic Materials and IBM have agreed to jointly develop patterning materials and processes to enable implant at and below the 32nm node.

Implant technology will play an increasingly critical role at the 32nm node and below — the companies claim in a statement that ~40% of photo levels in advanced logic will be implant — but controlling implants in junction formation also is becoming increasingly challenging as designs shrink. “Finding the right solutions to difficult technical challenges for the next-generation nodes depends not only on strong engineering and design but also close collaboration with leaders in the semiconductor industry,” stated James Fahey, president of microelectronic technologies for Rohm and Haas Electronic Materials. “Partnering with IBM will accelerate the development of new materials and ensure that we are on track to meet the needs for 32nm and 22 nm nodes.”

Work will take place at IBM’s facilities in East Fishkill, Yorktown, and Albany, NY, as well as Rohm and Haas Electronic Materials’ Advanced Technology Center in Marlborough, MA, where a new ultrahigh-NA 193nm immersion cluster is expected to be ready by June 2008.