March 4, 2008 — Kurt Ronse, IMEC’s director of lithography, reviews that group’s progress on EUV (first results on the alpha tool) and double patterning with Solid State Technology‘s Senior Technical Editor Debra Vogler. With a focus primarily on contact hole levels, IMEC presented results of a 32nm SRAM cell with the contact hole level exposed using EUV. The consortium has also been working on hard mask strategies at 32nm to address overlay budgets, as well as developing alternative resists to improve the cost-of-ownership for double-patterning.