Report: Hynix CEO sees closing technology gap w/ Samsung

Mar. 28, 2008 – Hynix plans to produce 54nm-based DRAM chips this year on schedule, saying this will “reduce the technology gap with Samsung,” according to the company’s CEO, quoted by the Korea Times. Hynix is currently expected to start 54nm-based DRAM production in 3Q08, vs. Samsung’s 56nm possibly starting in 2Q, the paper claims.

Hynix Semiconductor reportedly has been negotiating to send its 54nm DRAM process technology to Taiwanese partner ProMOS, a year after a similar deal for 66nm process technology raised eyebrows. ProMOS’ 90nm and 70nm technology also came from Hynix.

Speaking at the Hynix’s annual shareholders meeting, CEO Kim Jong-kap expressed optimism that the memory sector would bounce back in 2H08, with DRAM prices to rebound after 3Q and flash supply/demand would rebalance sometime in the second half. He also indicated what has already been reported, that the company may look to pare down its 2008 investments significantly, mainly during the second half of the year.

The paper also projected that nearly all (95%) of Hynix’s DRAM production will be on 300mm lines by 2012. It currently runs three 300mm lines and five 200mm lines in Korea and China.


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