As the technology and design of semiconductor devices advance, the need to test their reliability and gauge their lifetime becomes acute. Common reliability tests, such as electromigration (EM) and time-dependent dielectric breakdown (TDDB), require the device under test (DUT) to be put under thermal and electrical stress over long periods of time to accelerate failure mechanisms. Traditionally, these measurements were carried out after the DUT had been packaged, a costly process that delays time to data and lengthens the device design cycle. By moving these tests to wafer level with the PM300WLR, reliability data is obtained sooner, and the device design cycle and thus time to market can be improved significantly.
(April 8, 2008) San Jose, CA — ESI announced that its New Wave Research (NWR) Division has received a multiple system order from Hangzhou Silan Azure Corp., Ltd. for its AccuScribe 2112 laser-scribing equipment. China-based Silan Azure