by Ed Korczynski, Senior Technical Editor, Solid State Technology
May 7, 2008 – Last week, HP published that they are the first to have fabricated a novel circuit element first predicted in 1971 called the “memristor.” The HP authors claim that, “until now no one has presented either a useful physical model or an example of a memristor.” HP is certainly leading the world, but as one of many companies working on this technology for resistance-change random-access memory (ReRAM) applications. This spring’s Materials Research Society meeting featured an afternoon session on ReRAM with presentations by HP as well as Fujitsu, FZ Jülich, IMEC, Panasonic, and Samsung
This spring’s Materials Research Society meeting featured an afternoon session on ReRAM with presentations by HP as well as Fujitsu, FZ Jülich, IMEC, Panasonic, and Samsung.
Antique circuit theories are rarely invoked at MRS meetings, so the focus of the ReRAM session was all about how you engineer complex atomic-layer oxide elements. Another sub-session covered organic switching elements for printable ultra-dense memories in the far future. In other memory technology, the usual suspects are still doing the same tap-dances about FeRAM and MRAM, but PRAM seems to have new momentum due to investments by Intel and ST in Numonyx and so may take over some of the mainstream.