September 3, 2008: X-FAB Silicon Foundries‘ 200mm facility in Kuching, Sarawak, Malaysia, now is fully qualified for volume production and second sourcing of the company’s 0.35μm high-voltage process technology.

Called XH035, this process technology is ideal for a wide variety of applications, including RF and power management, low-power and high-precision mixed-signal circuits, analog front-ends for sensors, mixed-signal embedded systems, systems-on-chip (SoC) and automotive applications.

The XH035 CMOS technology can be expanded easily with a full range of add-on modules, including three- and four-layer metallization, a second gate-oxide for transistors with varying breakdown voltages of up to 50 Volts, well-isolated 3.3V and 5V transistors, and EEPROM storage blocks. Full front- and back-end modularity creates a lean process flow and optimizes the number of mask layers. The process also meets the AEC-Q100 standard for automotive applications.

The XH035 process comes with a variety of active and passive devices to address analog/mixed-signal design needs. These devices include high-voltage NMOS, PMOS and DMOS transistors, double-poly and MIM capacitors, high-ohmic and low-TC resistors. In addition, the process offers excellent matching, low on-resistance high-voltage devices and embedded NVM options. It also features a variety of dense standard cell libraries optimized for area, speed, low-power, or low-noise; and I/O libraries, including ESD support and numerous verified analog IP libraries.

The next process extension, already in “conditional release” development phase, will offer a compact single poly EEPROM cell 30% smaller than the current EEPROM and with two fewer mask layers. Designs and risk production can be started now on this extended process version.