Jan. 6, 2008 – ASM International and SAFC’s Hitech division have signed a partnership targeting atomic layer deposition (ALD) source materials for advanced ultrahigh-k (ULK) insulators targeting the 3x manufacturing node.
The partnership centers on new “cyclopentadienyl” chemical source materials seen enabling ALD of next-generation ULK insulators such as strontium and barium — with k>100 dielectric constants vs. the k≤30-40 of today’s zirconium and hafnium-based high-k insulators — expected to be ready for use in production at the 3x node starting around 2011. The new deal incorporates certification for chemical sources, a license for ASMI’s ALD patents, and further development of the chemical sources.
Peter Heys, director of R&D for SAFC Hitech, noted that the company and ASMI have been working together on these cyclopentadienyl source materials “for some time,” producing sources that demonstrate high-quality ULK films via ALD. The firms aim to scale up the materials for high-volume manufacturing of both strontium and barium ILK source precursors “up to and beyond 2011,” consistent with ITRS Roadmap requirements, he said in a statement.
“Partnership agreements such as this will allow us to develop new materials much more efficiently, and to prepare the supply chain for timely introduction of Ultra High-k materials in the manufacturing process,” added Ivo Raaijmakers, ASMI’s CTO and director of R&D.