Sneak preview: LSA for sub-45nm devices

Jeff Hebb of Ultratech will present a paper on extending laser spike annealing to the 22nm node at the NCCAVS Junction Technology Group meeting to be held Thursday, July 16 in San Francisco.

His topic at the session centers on CMOS leakage reduction using laser spike annealing (LSA). Key performance demands for global Internet devices include high performance, long battery life, and small form factor — serious challenges, for which LSA has technical advantages. It’s already being used for sub-45nm, and can extend to 22nm, he says.


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