by Debra Vogler, senior technical editor, Solid State Technology
September 15, 2009 – Oxford Instruments Plasma Technology recently launched the Nanofab800 Agile system that provides development opportunities to influence the growth of nanostructures. With a process temperature up to 800°C, and agile heating and cooling for rapid turnaround, the system also delivers control of alignment and dimensions of the nanostructures.
Additional product features include variable sample sizes up to a maximum of 200mm wafers, temperature uniformity better than ±1.5%, and agile temperature control. According to Cigang Xu, development scientist at Oxford Instruments Plasma Technology, the rate of temperature increase for the new system can be up to 130°C/min and the cooling rate is up to 40°C/minute. "These rates are faster than typical values for PECVD tools, and allow the system to have rapid turnaround," said Xu.
The system is able to process at pressures up to 5Torr with a flow rate >1sl/m (standard liter/minute). "High pressure may allow the decrease of the process temperature," noted Xu. "For example, the Si nanowire can be grown at lower temperature when the pressure is higher." A high flow rate capacity also enables flexible choice on the process conditions.
The system is configured with a vacuum load lock to ensure process repeatability and chamber cleanliness and it has an optional liquid source delivery system. There is also a custom-developed setup for aligned growth and control of film stress. — D.V.
|Dense CNTs grown by the Nanofab800 Agile system. (Source: Oxford Instruments Plasma Technology)|