ASM, Air Liquide to work on advanced high-k ALD

December 15, 2009 – ASM International NV has licensed key processes and material IP to the Air Liquide Group, related to deposition of advanced ultra-high-k insulator films such as Yttrium-doped Zirconia, STO and BST, used most recently as gate insulator material in logic manufacturing and expected to be used in future transistor and capacitor technologies.

The deal brings together Air Liquide’s ALOHA global research, manufacturing, and supply chain capability, with ASM’s Pulsar atomic layer deposition (ALD) system.

"It is essential that the whole supply chain, including chemicals, their transportation and storage, deposition equipment and source containers, reaches maturity before new materials will be adopted by our customers," stated Ivo Raaijmakers, chief technology officer of ASM. "The agreement with Air Liquide is a key step to enable ultra high-k materials for the industry." "It is essential for chemical suppliers to closely cooperate with tool suppliers on an ongoing basis," agreed Jean-Marc Girard, CTO of Air Liquide Electronics.


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