Allvia touts embedded capacitors with Si interposers, 3D stacks


March 2, 2010 – Allvia says it has integrated embedded capacitors on silicon interposers, a key interface between silicon devices and organic substrates, achieving >1500nF/cm2 capacitance.

Thin-film capacitors without through-silicon vias (TSV) have been used, but high interconnect inductance prevents their full benefit, the company explains. 3D integration with TSVs allows a much closer electrical path between the device and power supply decoupling capacitors; thus the low inductance TSV interconnects enable very high electrical performance when integrated with embedded thin-film capacitors, the company explains.

The company earlier this year announced integration and reliability testing of a silicon interposer between semiconductor die and substrate using its TSV technology.

Allvia CEO Sergey Savastiouk noted that with this process, capacitance from the die or package can be transferred to the interposer — and that the 1500nF/cm2 capacitance value "is not a limit of our process."

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