(September 16, 2010) — Professor Jeff Kelber of the University of North Texas, along with student Mi Zhou, presented a paper at SRC TECHCON 2010: “Graphene/boron nitride heterojunctions grown directly on ruthenium 001 by CVD and ALD: extrinsically doped graphene.” In the accompanying podcast interview, Dr. Kelber gives a comprehensive summary of the research and how it can be used by the industry.
Podcast, "Graphene-based devices: U of North Texas researchers take first step in practical production" Download or Play Now
Accordingly to Kelber, this is the first demonstration of direct graphene CVD on a dielectric substrate, “which is an essential step in the practical production of graphene-based devices,” said Kelber. Looking ahead, he believes the industry will be able to take a direct path to making logic-based graphene devices on various dielectric substrates. “The trick will be to try and understand how we can integrate those dielectric substrates with silicon or with copper lines for back-end [packaging] or front-end [semiconductor] applications.”
TECHCON, the research conference sponsored by Semiconductor Research Corporation, also hosted projects on
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