(October 29, 2010) — The VIISta Trident high-current ion implanter from Varian Semiconductor Equipment Associates Inc. (NASDAQ: VSEA) enables high-performance, low-leakage devices while improving productivity at the sub30nm wafer fab node.
The VIISta Trident ion implant system is designed to maximize device performance and yield, energy purity, and productivity. Trident anticipates future node requirements with significant advancements in uniformity, angle control and process temperature control.
It maintains high energy purity across all species, doses and energies for even the most challenging recipes. Trident’s advanced beam-line design also provides global and local uniformity and tight angle control.
Trident uses Varian’s Process Temperature Control product, PTC II. PTC II enables implantation while controlling wafer temperature to as low as -100 C. PTC II is running in high volume manufacturing on multiple layers.
Logic, memory and foundry customers are evaluating Trident for advanced nodes. A large Asian manufacturer has qualified and is using Trident in production. Volume shipments will begin in the first half of 2011.
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