By Debra Vogler, senior technical editor
March 11, 2011 — Among the topics covered at KLA-Tencor’s annual Lithography Users Forum (2/27/11) at the SPIE Advanced Lithography Conference (2/27-3/3/11) was extension of KLAC’s Teron 600 platform for inspection of EUV blanks at the 16nm half pitch (hp) node.
Figure. Blank inspection: Teron platform extension defect signal sufficient for 16nm HP (1 × 50nm FWHM).
When KLAC released the Teron 600 inspection system, the impetus was industry’s need to simultaneously evaluate several lithography technologies for use at the 2Xnm, including spacer pitch splitting/pattern cutting, true pitch splitting, inverse lithography/source mask optimization, as well as EUV. The figure shows simulation results from the 600 platform for inspection of EUV blanks at the 16nm hp node.
In a podcast interview recorded at the event, Brian Trafas, chief marketing officer at KLA-Tencor, discusses the process control needs facing the semiconductor industry, including cost of ownership (COO) and key metrology parameters for 193nm lithography, such as overlay control. One EUV-specific challenge is achieving defect-free masks. To that end, the company has been working on infrastructure needed for mask monitoring (reticle inspection for blanks and patterned masks), as well as patterned wafer defect solutions.