March 30, 2011 – BUSINESS WIRE — austriamicrosystems (SIX:AMS) conditionally released its advanced 0.18µm High-Voltage CMOS process technology "H18" to for volume production. It will be manufactured in IBM’s 200mm Burlington, VT, wafer facility.
Jointly developed with IBM, the 0.18µm High-Voltage CMOS process is the 6th generation of continuously improved High-Voltage CMOS technologies developed at austriamicrosystems.
Featuring a new level of RF and HV integration capability on a single IC, the new 0.18µm High-Voltage CMOS process offers integration density up to 118k gates/mm2, enabling system on chip (SoC) applications and power-on resistance (Rdson) for silicon area reduction. The integration capabilities of H18 enable design houses and IDMs to create new applications in areas such as smart sensors, sensor interface devices, smart meters, industrial and building controls and LED lighting control.
Only a few mask level adders are required on top of the fully compatible CMOS base process to implement high-voltage capabilities. The process allows the integration of 1.8V, 5V, 20V and 50V devices on a single chip without process modifications. Process features such as Schottky barrier diode, high-resistive and precision poly, single- and dual metal-insulator-metal (MIM) capacitors, varactors and up to 7 metal layers including thick last metal complete the High-Voltage H18 CMOS process.
Modular SoC designs using H18 can integrate analog high-voltage blocks with RF CMOS, extended digital functions and micro-controllers, said Thomas Riener, SVP and GM of austriamicrosystems’ Full Service Foundry business unit. "The H18 technology is now ramping in a broad range of smart green applications such as power management for photovoltaics and LED driver applications."
Learn more at http://www.austriamicrosystems.com
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