April 14, 2011 – Marketwire — 4DS Inc., RRAM technology company, joined SEMATECH’s Front End Processes (FEP) to partner on efforts in non-volatile memory (NVM) technology development.
4DS will collaborate with engineers from SEMATECH’s memory program to build a full transistor-memory, demonstrating a working prototype of a low-power RRAM device based on 4DS’ proprietary material processes and device structures.
RRAM is a next-generation non-volatile memory considered a potential replacement for Flash memory and a complement for non-volatile memory applications due to its speed, power profile and scaling. One of the published obstacles in deploying robust RRAM has been establishing a stable memory element. The race to develop circuits has left a gap for development of reliable materials and deposition techniques for low-cost manufacturing. 4DS spent years developing materials and processes with a promising combination of simplified structures for manufacturing with low power performance. "The joint partnership will expand on SEMATECH’s current collaborative efforts to develop suitable materials and process techniques for future non-volatile memory applications," said Raj Jammy, vice president of emerging technologies at SEMATECH.
The 4DS platform for non-volatile memory is a low-temperature CMOS-compatible, back-end-of-line (BEOL) process with a simple structure that requires significantly fewer mask steps than Flash memory. It potentially operates with significantly lower power and writes faster than conventional flash memories.
4DS Inc. is a privately held company leading the development of RRAM materials, processes and equipment for production of RRAM. Learn more at www.4-d-s.com.
SEMATECH is an international consortium of leading semiconductor manufacturers, nanoelectronics, and emerging technology partners. Learn more at www.sematech.org