SanDisk 19nm fab tech ramps; volume by H2

April 27, 2011 – BUSINESS WIRE — SanDisk Corporation (NASDAQ:SNDK), flash memory card maker, announced a 64-gigabit (Gb), 2-bits-per-cell (X2) monolithic chip made on 19nm technology.

This latest technology enables SanDisk to produce embedded and removable storage devices with the high capacities and small form factors used in mobile phones, tablet computers and other devices.

SanDisk will sample its 19nm 64Gb X2 device this quarter and expects to begin high-volume production in the second half of 2011. At that time, SanDisk will also add 3-bits-per-cell (X3) products fabricated with the 19nm process technology to its product lineup.

The company’s ongoing collaboration with manufacturing partner Toshiba helped enable the 19nm node production, said Yoram Cedar, executive vice president and chief technology officer, SanDisk.

The 19nm memory die uses sophisticated flash memory technology, including advanced process innovations and cell-design solutions. SanDisk’s All-Bit-Line (ABL) architecture with proprietary programming algorithms and multi-level data storage management schemes help yield multi-level cell (MLC) NAND flash memory chips that do not sacrifice performance or reliability.

SanDisk Corporation performs flash memory card research, manufacturing, and product design. SanDisk’s website:

Also read: Analyst take: Why Intel/Micron’s 20nm NAND flash is a big deal

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Analyst take: Why Intel/Micron’s 20nm NAND flash is a big deal


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