June 10, 2011 – Marketwire — Lattice Power Corporation and ShineOn Inc. jointly demonstrated a high-brightness LED (HB-LED) product based on GaN-on-Si technology.
Lattice Power built the HBLED, LP1000, chip as a thin-film vertical structure on its proprietary gallium nitride on silicon (GaN-on-Si) technology. The chip was packaged in ShineOn’s MOZ3535 ceramic packaging platform. GaN-on-Si is inherently low cost, and the ceramic packaging technology is well-established and automated, the companies said in a statement. GaN on a silicon substrate is being investigated by multiple companies and researchers to build better power semiconductors.
The finished product has a small form factor and low thermal impedance, with good optical performance. The device can take 350-1000mA current input and deliver more than 100-lumen light output at 350mA, or more than 200 lumens when over-driven.
The component suits lighting indoors and as a incandescent replacement bulb, flashlight and even direct-lit LCD backlighting device.
The HB-LED is available as samples, with volume shipments beginning in Q4 2011.
LatticePower fabricates high-power high-brightness LEDs with GaN on a Silicon substrate. Learn more at http://www.latticepower.com
ShineOn Corporation researches, develops, and produces high-brightness and ultra-high-brightness LED devices. Learn more at www.shineon.cn
IMEC tips GaN-on-Si for power switches