June 28, 2011 – GLOBE NEWSWIRE — Microsemi Corporation (Nasdaq:MSCC) packaged a 9gigabit (Gb) DDR3 SDRAM memory device in a single plastic ball grid array (PBGA) offered as a compact x72 dual in-line memory module (DIMM). The compact package suits mission-critical applications requiring up to 4GByte memory densities in smaller, faster packages with extended-temperature ranges.

The commercial off-the-shelf (COTS) plastic BGA DDR3 device is designed to reduce board space compared to discrete memory devices or chipscale memory packages and other single-die packages  (30% space savings and 21% reduced I/O routing). The memory devices also streamline I/O routing and reduce component count and placements with good signal integrity, Microsemi says.

The BGA measures 20.5 x 21.5mm (375 form factor). It supports data rates of 800, 1,066 and 1,333 megabits per second (Mb/s) on a 1.5V power supply.

Microsemi’s high-speed memories use a 4ns-prefetch architecture with an interface that allows two data words to be transmitted per clock cycle. The devices can be ruggedized and processed for tamper resistance. The company plans to offer a low-profile option that will be footprint-compatible with the current 375 PBGA package.

"A PBGA package is similar to an FCBGA package in that each uses a silicon die. The principal difference is that a PBGA utilizes a wire bonded die while the FCBGA uses a flip chip. As a result, the PBGA almost always incorporates fewer I/Os than the FCBGA…" Read more

Microsemi Corporation (Nasdaq:MSCC) offers semiconductors for aerospace, defense and security; enterprise and commercial; and industrial and alternative energy markets. Learn more at www.microsemi.com. 

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