New power MOSFET package from IRF minimizes form factor

June 13, 2011 – BUSINESS WIRE — International Rectifier, (IR, NYSE:IRF), power management technology provider, introduced a PQFN 2 x 2mm with <1mm profile package featuring its latest HEXFET MOSFET silicon. The new package is ultra-compact, high density and efficient for lower-power applications such as smart phones, tablet PCs, camcorders, digital still cameras, notebook PCs, servers, and network communications equipment.

The new packages add to IR’s power MOSFET packaging options, miniaturizing form factor with benchmark silicon, said Stéphane Ernoux, director, IR’s Power Management Devices Business Unit, adding that they suit applications with high digital content.

The new PQFN2x2 devices are available in 20, 25, and 30V with standard or logic level gate drive, using IR’s latest low voltage N-Channel and P-Channel silicon technologies to offer very low on-resistance (RDS(on)), and high power density in line with a PQFN3.3×3.3 or PQFN5x6 package.

The PQFN2x2 family includes P-Channel devices optimized for use in the high-side of load switches, providing a simpler drive solution. They are RoHS compliant.
 
International Rectifier (NYSE:IRF) provides power management technology via analog and mixed signal ICs, advanced circuit devices, integrated power systems and components. For more information, go to www.irf.com.

Also read: Power semiconductor packaging drops wire bonding for sintered foil

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