June 3, 2011 – Marketwire — NXP Semiconductors N.V. (NASDAQ:NXPI) launched overmolded plastic package (OMP) RF power devices with 2.5-200W peak power. The plastic packages are a lower-cost option alongside NXP’s ceramic package RF devices.
The overmolded plastic package can reduce bill of materials (BOM) costs by 20% (compared to ceramic), said Mark Murphy, director of RF power products, NXP Semiconductors.
NXP’s OMP line covers these high-volume frequency ranges and applications:
- 10 – 500-MHz ISM,
- 470 860-MHz broadcast,
- 700 – 2200-MHz GSM, WCDMA telecom,
- 2300 – 2700-MHz LTE telecom,
- 2.45 GHz ISM,
- and products for the 2700 – 3500-MHz S-band.
NXP will package OMP products up to 10W using its existing IC packages; higher-power devices will be in new footprint packages. Gull wing packages will be available for surface mount assembly.
Product types will extend to existing categories: discrete pre-drivers (2.5-10W), drivers (20-45W), MMICs (20-60W), finals (50-200W) and integrated Doherty devices (50-110W). The plastic packages are available in ranges from DC to 3500 MHz; single-stage broadband drivers in HVSON, from 2.5 to 10W; single-stage drivers from 25 to 45W; dual-stage MMICs from 20 to 60W (high-gain drivers or combined as low-power dual-stage Doherty amplifiers), fully integrated plug-and-play Doherty PAs in a single package (50 to 110 W), and SOT502-sized, single-ended and push-pull final transistors ranging from 50 to 200W.
A limited selection of devices are currently available as engineering samples, with volume production scheduled to start in Q4 2011.
NXP Semiconductors N.V. (NASDAQ: NXPI) provides high-performance mixed-signal and standard products. Additional information can be found by visiting www.nxp.com.
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