July 12, 2011 — Applied Materials Inc. (AMAT) launched the Applied Centura Integrated Gate Stack system for creating gate dielectric structures in 22nm logic chips. It processes the entire high-k multilayer stack in a single vacuum environment, preserving integrity of film interfaces.
Applied Materials developed the Integrated Gate Stack system to build the dielectric film stack atomically, based around Applied’s advanced atomic layer deposition (ALD) technology, which builds ultra-thin, hafnium-based layers less than 2nm in thickness a fraction of a monolayer at a time.
By fabricating the entire gate dielectric stack under vacuum, the Centura system is able to prevent interface contamination from exposure to ambient air. AMAT reports that eliminating air exposure during processing improves mobility in the transistor by up to 10% and reduces switching voltage variability between transistors by up to 40%.
Applied Materials will showcase its Centura Integrated Gate Stack technology at SEMICON West in San Francisco from July 12-14, booth 303, South Hall. More news and products from SEMICON West
Applied Materials, Inc. (Nasdaq:AMAT) provides equipment, services and software to advanced semiconductor, flat panel display and solar photovoltaic manufacturers. Learn more at www.appliedmaterials.com.
Recent Applied Materials toolset introductions:
- Applied Materials adds tungsten film planarization to CMP tool
- Applied Materials solar cell manufacturing releases
- AMAT debuts DRAM fab tools for denser transistors