Applied heats up RTP for 2Xnm with backside wafer heating

July 1, 2011 – Switching the heating of a wafer during rapid thermal processing (RTP) to the backside of the wafer improves heat distribution and uniformity and widens the temperature range, all of which should be of particular benefit as process technologies shrink to and below the 2Xnm generation, says Applied Materials, with the introduction of its new Vantage Vulcan RTP tool.

Historically with RTP, Si wafers are heated to 400


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