Imec performs selective CVD of GeSN

August 26, 2011 — Imec performed boron-doped selective epitaxial growth via chemical vapor deposition (CVD) of germanium tin (GeSn) in a production-like environment, using commercially available Ge and Sn precursors. The technique could introduce uniaxial compressive stress in a Ge channel to attain high mobility values in MOSFETs.

The GeSn layers with 8% Sn were defect free, fully strained and thermally stable for temperatures up to 500

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