KLAC debuts 20nm-node defect inspection system

August 16, 2011 — KLA-Tencor Corporation (NASDAQ:KLAC) launched the eDR-7000 electron-beam (e-beam) wafer defect review system for chip manufacturing at the 20nm device nodes and below. New technologies enhance sensitivity and throughput during defect imaging and classification processes.

Also read: Yields are key to low costs, in traditional chips and emerging LEDs

The eDR-7000 can "re-locate and image 10nm defects" and oft-missed defect types, and can "review multiple defects per second," driving directly to the defect site at high resolution, said Cecelia Campochiaro, Ph.D., VP and GM, KLA-Tencor’s e-Beam Technology division.

The third-generation, field-tested e-beam immersion column offers high resolution and topographic imaging. The advanced stage and vibration-isolation system claims a three-fold improvement in coordinate accuracy and up to a four-fold increase in defect review speed over the current-generation tool. Sensitivity improvements for bare wafer defects are enabled by energy-dispersive x-ray (EDX) composition analysis. A unique reticle defect review mode investigates sites where reticle defects may have printed. KLAC also reports faster process window characterization. Voltage-contrast imaging mode is used to review e-beam wafer inspection data; offline defect classification capability is also available.

KLAC has received orders for eDR-7000 systems from logic, memory, and equipment manufacturers and foundries. Multiple systems are in use for development and chip production.

KLA-Tencor Corporation (NASDAQ: KLAC) provides process control and yield management products for the semiconductor, data storage, LED, photovoltaic, and other related nanoelectronics industries. Additional information may be found at www.kla-tencor.com.

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