August 8, 2011 – Leti’s Serge Tedesco, lithography program manager, provides an update on the research group’s 193 optical lithography program for 22nm and below: processes and materials development. The group is also looking into multi e-beam lithography techniques for flexibility and cost effectiveness. The goal is 10 WPH on one module, then 100 WPH on a cluster tool (in 2017, Tedesco expects).
Tedesco speaks with Debra Vogler at SEMICON West 2011.
EUV will not be ready before the 16nm node; for NAND flash, not until 12nm. While EUV has many potential benefits, another technology will need to fill the gap. 193 immersion lithography (193i) is a viable option, for example, Tedesco explains.
Tedesco points out that the end-user perspective is always critical with new technologies. The tool is not enough — infrastructure must be ready for adoption as well.